IRLU3915PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Threshold Voltage :

3V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Height :

6.22mm

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

55V

Width :

2.3876mm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate to Source Voltage (Vgs) :

16V

REACH SVHC :

No SVHC

Turn On Delay Time :

7.4 ns

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Rise Time :

51ns

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

200 mJ

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1870pF @ 25V

Element Configuration :

Single

Power Dissipation :

120W

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±16V

Fall Time (Typ) :

100 ns

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Turn-Off Delay Time :

83 ns

Nominal Vgs :

3 V

Current Rating :

30A

Length :

6.7056mm

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

120W Tc

Resistance :

14mOhm

Mounting Type :

Through Hole

Radiation Hardening :

No

Number of Terminations :

3

Mount :

Through Hole

Published :

2010

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

240A

Voltage - Rated DC :

55V

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

61A

Transistor Element Material :

SILICON

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Pins :

3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Dual Supply Voltage :

55V

Current - Continuous Drain (Id) @ 25°C :

30A Tc