IRLU3802PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±12V

Power Dissipation-Max :

88W Tc

Number of Pins :

3

Packaging :

Tube

ECCN Code :

EAR99

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2490pF @ 6V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Width :

2.3876mm

Length :

6.7056mm

Published :

2004

Voltage - Rated DC :

12V

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Gate to Source Voltage (Vgs) :

12V

RoHS Status :

RoHS Compliant

Height :

6.22mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Continuous Drain Current (ID) :

84A

Element Configuration :

Single

Drain to Source Breakdown Voltage :

12V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 4.5V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Turn On Delay Time :

11 ns

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

21 ns

JESD-609 Code :

e3

Rise Time :

14ns

Number of Elements :

1

Transistor Application :

SWITCHING

Current Rating :

84A

Fall Time (Typ) :

17 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Power Dissipation :

88W

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 15A, 4.5V

FET Type :

N-Channel