IRLU3717PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Published :

2004

Max Operating Temperature :

175°C

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

20V

Rds On Max :

4 mΩ

Length :

6.6mm

Resistance :

4.2mOhm

Voltage - Rated DC :

20V

REACH SVHC :

No SVHC

Dual Supply Voltage :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 10V

Drain to Source Resistance :

5.7mOhm

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 4.5V

Rds On (Max) @ Id, Vgs :

4mOhm @ 15A, 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

89W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

33 ns

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

5.8 ns

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Height :

6.1mm

Lead Free :

Lead Free

Number of Pins :

3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

14 ns

Min Operating Temperature :

-55°C

Current Rating :

120A

Mount :

Through Hole

Input Capacitance :

2.83nF

Vgs (Max) :

±20V

Nominal Vgs :

2 V

Rise Time :

14ns

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Through Hole

FET Type :

N-Channel

Supplier Device Package :

I-PAK

Threshold Voltage :

2V

Continuous Drain Current (ID) :

120A

Power Dissipation :

89W

Fall Time (Typ) :

16 ns

Width :

2.3mm

Radiation Hardening :

No