IRLU3715PBF
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- Mfr.Part #
- IRLU3715PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 54A I-PAK
- Stock
- 32,628
- In Stock ：
- 32,628
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 14mOhm @ 26A, 10V
- Packaging :
- Tube
- Power Dissipation-Max :
- 3.8W Ta 71W Tc
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Rise Time :
- 73ns
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±20V
- Published :
- 2004
- Input Capacitance (Ciss) (Max) @ Vds :
- 1060pF @ 10V
- Rds On Max :
- 14 mΩ
- Series :
- HEXFET®
- Voltage - Rated DC :
- 20V
- Continuous Drain Current (ID) :
- 54A
- Current Rating :
- 54A
- Drain to Source Voltage (Vdss) :
- 20V
- Drain to Source Breakdown Voltage :
- 20V
- Power Dissipation :
- 71W
- Input Capacitance :
- 1.06nF
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Supplier Device Package :
- I-PAK
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Drain to Source Resistance :
- 20mOhm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 175°C
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Through Hole
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 54A Tc
- Datasheets
- IRLU3715PBF
N-Channel Tube 14mOhm @ 26A, 10V ±20V 1060pF @ 10V 17nC @ 4.5V 20V TO-251-3 Short Leads, IPak, TO-251AA
IRLU3715PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1060pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 54A.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 20mOhm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IRLU3715PBF Features
a continuous drain current (ID) of 54A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 20mOhm
a 20V drain to source voltage (Vdss)
IRLU3715PBF Applications
There are a lot of Infineon Technologies
IRLU3715PBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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