IRLU3715

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 10V

Pulsed Drain Current-Max (IDM) :

200A

Mounting Type :

Through Hole

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSIP-T3

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

14m Ω @ 26A, 10V

Transistor Application :

SWITCHING

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation-Max :

3.8W Ta 71W Tc

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Drain-source On Resistance-Max :

0.011Ohm

Number of Elements :

1

DS Breakdown Voltage-Min :

20V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN OVER NICKEL

Avalanche Energy Rating (Eas) :

19 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

49A

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

No

Case Connection :

DRAIN

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

54A Tc

Published :

2001

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Series :

HEXFET®

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Qualification Status :

Not Qualified