IRLU3714ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

25mOhm

Power Dissipation :

35W

Packaging :

Tube

Supplier Device Package :

I-PAK

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

4.3 ns

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Rise Time :

7.6ns

Power Dissipation-Max :

35W Tc

Drain to Source Voltage (Vdss) :

20V

Max Operating Temperature :

175°C

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current Rating :

37A

Turn-Off Delay Time :

9.2 ns

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

15mOhm

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Voltage - Rated DC :

20V

Rds On (Max) @ Id, Vgs :

15mOhm @ 15A, 10V

Mount :

Through Hole

Recovery Time :

32 ns

Input Capacitance :

560pF

Min Operating Temperature :

-55°C

Rds On Max :

15 mΩ

Continuous Drain Current (ID) :

37A

Height :

6.1mm

Length :

6.6mm

Turn On Delay Time :

5.4 ns

Width :

2.3mm

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

7.1nC @ 4.5V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

20V

Lead Free :

Lead Free

Published :

2003

Mounting Type :

Through Hole