IRLU3705ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Height :

6.223mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Continuous Drain Current (ID) :

42A

FET Type :

N-Channel

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Drain Current-Max (Abs) (ID) :

89A

Packaging :

Tube

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Voltage - Rated DC :

55V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 5V

Width :

2.3876mm

Drain to Source Breakdown Voltage :

55V

Lead Free :

Lead Free

Rise Time :

150ns

Transistor Element Material :

SILICON

Published :

2004

RoHS Status :

RoHS Compliant

Number of Elements :

1

Factory Lead Time :

16 Weeks

Element Configuration :

Single

Turn On Delay Time :

17 ns

Length :

6.7056mm

Gate to Source Voltage (Vgs) :

16V

ECCN Code :

EAR99

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

33 ns

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

8m Ω @ 42A, 10V

Current Rating :

42A

Fall Time (Typ) :

70 ns

Mounting Type :

Through Hole

Power Dissipation-Max :

130W Tc

Vgs (Max) :

±16V

Power Dissipation :

130W

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Transistor Application :

SWITCHING

Resistance :

8mOhm

Vgs(th) (Max) @ Id :

3V @ 250µA