IRLU3705Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

42A

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain-source On Resistance-Max :

0.008Ohm

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Series :

HEXFET®

Vgs (Max) :

±16V

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

Terminal Position :

Single

DS Breakdown Voltage-Min :

55V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

55V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSIP-T3

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

8m Ω @ 42A, 10V

Number of Elements :

1

Packaging :

Tube

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

190 mJ

Pulsed Drain Current-Max (IDM) :

360A

RoHS Status :

Non-RoHS Compliant

Published :

2004

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

130W Tc