IRLU3410PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

2V

Continuous Drain Current (ID) :

17A

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

105m Ω @ 10A, 10V

Nominal Vgs :

2 V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

7.2 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Width :

2.3876mm

Drain to Source Breakdown Voltage :

100V

Rise Time :

53ns

Length :

6.7056mm

Fall Time (Typ) :

26 ns

Packaging :

Tube

Voltage - Rated DC :

100V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Power Dissipation-Max :

79W Tc

Turn-Off Delay Time :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Radiation Hardening :

No

REACH SVHC :

No SVHC

Mount :

Through Hole

Current Rating :

17A

Resistance :

105mOhm

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs (Max) :

±16V

Number of Elements :

1

Published :

2004

Height :

6.22mm

Power Dissipation :

52W

Mounting Type :

Through Hole

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Pulsed Drain Current-Max (IDM) :

60A

Avalanche Energy Rating (Eas) :

150 mJ

Gate to Source Voltage (Vgs) :

16V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

100V

ECCN Code :

EAR99

JESD-609 Code :

e3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA