IRLU3303PBF

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Mfr.Part #
IRLU3303PBF
Manufacturer
Infineon Technologies
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 30V 35A I-PAK
Stock
46,640
In Stock :
46,640

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
35A Tc
FET Type :
N-Channel
Drain to Source Resistance :
45mOhm
Min Operating Temperature :
-55°C
Vgs(th) (Max) @ Id :
1V @ 250μA
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Rds On (Max) @ Id, Vgs :
31mOhm @ 21A, 10V
Operating Temperature :
-55°C~175°C TJ
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
870pF @ 25V
Power Dissipation :
57W
Vgs (Max) :
±16V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Number of Pins :
3
Input Capacitance :
870pF
Mount :
Through Hole
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
68W Tc
Rds On Max :
31 mΩ
Drain to Source Voltage (Vdss) :
30V
Series :
HEXFET®
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 4.5V
Rise Time :
200ns
Lead Free :
Lead Free
Continuous Drain Current (ID) :
35A
Supplier Device Package :
I-PAK
Voltage - Rated DC :
30V
Packaging :
Tube
Gate to Source Voltage (Vgs) :
16V
Current Rating :
35A
Drain to Source Breakdown Voltage :
30V
Max Operating Temperature :
175°C
Number of Elements :
1
Published :
2004
Datasheets
IRLU3303PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRLU3303PBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Pins:3, IRLU3303PBF pinout, IRLU3303PBF datasheet PDF, IRLU3303PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRLU3303PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRLU3303PBF


N-Channel Tube 31mOhm @ 21A, 10V ±16V 870pF @ 25V 26nC @ 4.5V 30V TO-251-3 Short Leads, IPak, TO-251AA

IRLU3303PBF Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 870pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 35A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 45mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IRLU3303PBF Features


a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 30V voltage
single MOSFETs transistor is 45mOhm
a 30V drain to source voltage (Vdss)


IRLU3303PBF Applications


There are a lot of Infineon Technologies
IRLU3303PBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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