IRLU3114ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

40V

Rds On Max :

4.9 mΩ

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

4.9mOhm @ 42A, 10V

Turn-Off Delay Time :

33 ns

Input Capacitance :

3.81nF

Continuous Drain Current (ID) :

130A

Turn On Delay Time :

25 ns

RoHS Status :

RoHS Compliant

Threshold Voltage :

2.5V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 4.5V

Published :

2007

Rise Time :

140ns

REACH SVHC :

No SVHC

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Elements :

1

Min Operating Temperature :

-55°C

Mount :

Through Hole

Length :

6.7056mm

Fall Time (Typ) :

50 ns

Vgs (Max) :

±16V

Power Dissipation-Max :

140W Tc

Gate to Source Voltage (Vgs) :

16V

Mounting Type :

Through Hole

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

40V

Height :

6.22mm

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Number of Pins :

3

Power Dissipation :

140W

Max Operating Temperature :

175°C

FET Type :

N-Channel

Width :

2.3876mm

Input Capacitance (Ciss) (Max) @ Vds :

3810pF @ 25V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

6.5mOhm

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Supplier Device Package :

I-PAK