IRLU3103PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

30V

Lead Free :

Lead Free

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Fall Time (Typ) :

54 ns

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

240 mJ

Transistor Element Material :

SILICON

Terminal Position :

Single

Threshold Voltage :

1V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

220A

Rise Time :

210ns

Vgs (Max) :

±16V

Power Dissipation-Max :

107W Tc

Published :

2004

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Width :

2.3876mm

Height :

6.22mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Application :

SWITCHING

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

20 ns

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

9 ns

RoHS Status :

RoHS Compliant

Current Rating :

55A

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Packaging :

Tube

ECCN Code :

EAR99

Continuous Drain Current (ID) :

55A

Time@Peak Reflow Temperature-Max (s) :

30

Length :

6.7056mm

FET Type :

N-Channel

Recovery Time :

120 ns

Drain Current-Max (Abs) (ID) :

20A

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Nominal Vgs :

1 V

Mounting Type :

Through Hole

Series :

HEXFET®

Power Dissipation :

69W

Gate to Source Voltage (Vgs) :

16V

Rds On (Max) @ Id, Vgs :

19m Ω @ 33A, 10V

Case Connection :

DRAIN

Voltage - Rated DC :

30V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Resistance :

19mOhm

Contact Plating :

Tin