IRLU3103PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

30V

Turn On Delay Time :

9 ns

Power Dissipation-Max :

107W Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Terminal Position :

Single

Case Connection :

DRAIN

Voltage - Rated DC :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA

Mount :

Through Hole

Transistor Element Material :

SILICON

Current Rating :

55A

Number of Terminations :

3

Recovery Time :

120 ns

Drain Current-Max (Abs) (ID) :

20A

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Width :

2.3876mm

Fall Time (Typ) :

54 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Contact Plating :

Tin

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

220A

Published :

2004

Power Dissipation :

69W

Length :

6.7056mm

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

19m Ω @ 33A, 10V

Continuous Drain Current (ID) :

55A

Vgs (Max) :

±16V

Threshold Voltage :

1V

FET Type :

N-Channel

Lead Free :

Lead Free

Packaging :

Tube

Nominal Vgs :

1 V

Resistance :

19mOhm

Operating Mode :

ENHANCEMENT MODE

Height :

6.22mm

Number of Pins :

3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

ECCN Code :

EAR99

Turn-Off Delay Time :

20 ns

Transistor Application :

SWITCHING

Rise Time :

210ns

Radiation Hardening :

No

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

16V

Avalanche Energy Rating (Eas) :

240 mJ

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260