IRLU3103

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Rds On (Max) @ Id, Vgs :

19m Ω @ 33A, 10V

Packaging :

Tube

Power Dissipation-Max :

107W Tc

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain Current-Max (Abs) (ID) :

20A

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

220A

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Peak Reflow Temperature (Cel) :

245

JESD-609 Code :

e0

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Case Connection :

DRAIN

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Avalanche Energy Rating (Eas) :

240 mJ

Vgs (Max) :

±16V

JESD-30 Code :

R-PSIP-T3

Current - Continuous Drain (Id) @ 25°C :

55A Tc

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.019Ohm

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Published :

1998