IRLU2905Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Surface Mount :

No

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSIP-T3

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

42A

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

55V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

55V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

240A

Terminal Finish :

Tin/Lead (Sn/Pb)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 36A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

110W Tc

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 5V

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Vgs (Max) :

±16V

Avalanche Energy Rating (Eas) :

85 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 25V

Number of Terminations :

3

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

245

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Packaging :

Tube

Drain-source On Resistance-Max :

0.0135Ohm