IRLU2905PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Case Connection :

DRAIN

Min Operating Temperature :

-55°C

Dual Supply Voltage :

55V

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

55V

Series :

HEXFET®

Length :

6.7056mm

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Turn On Delay Time :

11 ns

Power Dissipation :

110W

Width :

2.3876mm

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Rise Time :

84ns

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

16V

Drain Current-Max (Abs) (ID) :

20A

Number of Terminations :

3

Continuous Drain Current (ID) :

42A

Configuration :

SINGLE WITH BUILT-IN DIODE

Resistance :

27mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Max Operating Temperature :

175°C

Mounting Type :

Through Hole

Height :

6.22mm

JESD-609 Code :

e3

Threshold Voltage :

2V

Current Rating :

42A

Number of Pins :

3

Packaging :

Tube

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Nominal Vgs :

2 V

Factory Lead Time :

13 Weeks

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 5V

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

55V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

27m Ω @ 25A, 10V

Mount :

Through Hole

Max Power Dissipation :

110W

Turn-Off Delay Time :

26 ns

Number of Elements :

1

Fall Time (Typ) :

15 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier