IRLU2905

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Through Hole

Number of Elements :

1

Peak Reflow Temperature (Cel) :

245

DS Breakdown Voltage-Min :

55V

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

27m Ω @ 25A, 10V

Avalanche Energy Rating (Eas) :

210 mJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.03Ohm

Terminal Finish :

Tin/Lead (Sn/Pb)

Vgs (Max) :

±16V

JESD-609 Code :

e0

Series :

HEXFET®

Case Connection :

DRAIN

FET Type :

N-Channel

Additional Feature :

ULTRA-LOW RESISTANCE, AVALANCHE RATED, FAST SWITCHING

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Terminal Position :

Single

Power Dissipation-Max :

110W Tc

ECCN Code :

EAR99

Published :

2000

Pulsed Drain Current-Max (IDM) :

160A

Transistor Element Material :

SILICON

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

Drain Current-Max (Abs) (ID) :

42A

Qualification Status :

Not Qualified

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V