IRLL3303TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Recovery Time :

98 ns

JESD-609 Code :

e3

Height :

1.8mm

Mounting Type :

Surface Mount

Contact Plating :

Tin

Case Connection :

DRAIN

Voltage - Rated DC :

30V

Dual Supply Voltage :

30V

Radiation Hardening :

No

Turn-Off Delay Time :

33 ns

Gate to Source Voltage (Vgs) :

16V

Continuous Drain Current (ID) :

4.6A

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

6.5A

Resistance :

31mOhm

Element Configuration :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

28 ns

Published :

1999

Rise Time :

22ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Pins :

3

Factory Lead Time :

10 Weeks

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 25V

Rds On (Max) @ Id, Vgs :

31m Ω @ 4.6A, 10V

Threshold Voltage :

1V

Length :

6.6802mm

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Number of Elements :

1

Current Rating :

4.6A

Power Dissipation :

2.1W

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

FET Type :

N-Channel

Mount :

Surface Mount

Lead Free :

Contains Lead, Lead Free

Number of Terminations :

4

JESD-30 Code :

R-PDSO-G4

ECCN Code :

EAR99

Width :

3.7mm

Power Dissipation-Max :

1W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Terminal Position :

Dual

Turn On Delay Time :

7.2 ns

Package / Case :

TO-261-4, TO-261AA

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

1 V

Vgs (Max) :

±16V