IRLL014NTRPBF
- Mfr.Part #
- IRLL014NTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 2A SOT223
- Stock
- 263,132
- In Stock :
- 263,132
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 3.7mm
- Number of Terminations :
- 4
- Factory Lead Time :
- 12 Weeks
- FET Type :
- N-Channel
- Recovery Time :
- 61 ns
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 2A
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 2A, 10V
- Package / Case :
- TO-261-4, TO-261AA
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 1W Ta
- Power Dissipation :
- 2.1W
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 14 ns
- Published :
- 1999
- Mounting Type :
- Surface Mount
- Resistance :
- 200mOhm
- Dual Supply Voltage :
- 55V
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 55V
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 2.9 ns
- Current Rating :
- 2A
- Nominal Vgs :
- 2 V
- Continuous Drain Current (ID) :
- 2A
- Drain to Source Breakdown Voltage :
- 55V
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Height :
- 1.4478mm
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Vgs (Max) :
- ±16V
- Length :
- 6.6802mm
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Rise Time :
- 4.9ns
- Gate to Source Voltage (Vgs) :
- 16V
- Threshold Voltage :
- 2V
- Input Capacitance (Ciss) (Max) @ Vds :
- 230pF @ 25V
- Number of Elements :
- 1
- Turn On Delay Time :
- 5.1 ns
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-G4
- REACH SVHC :
- No SVHC
- Series :
- HEXFET®
- Datasheets
- IRLL014NTRPBF

N-Channel Tape & Reel (TR) 140m Ω @ 2A, 10V ±16V 230pF @ 25V 14nC @ 10V TO-261-4, TO-261AA
IRLL014NTRPBF IGBT Description
This reliable and efficient IGBT was published by Infineon using its HEXFET? technology, providing extremely low on-resistance and fast switching speed, and of course, the ruggedized design. Speaking of ratings, the IRLL014NTRPBF IGBT has a maximum continuous Drain current of 2.8 A (VGS @ 10 V). Besides, its Drain-to-Source breakdown voltage is rated at 55 V.
IRLL014NTRPBF IGBT Features
Advanced Process Technology
Surface Mount
Fully Avalanche Rated
Fast Switching
Dynamic dv/dt Rating
Ultra-Low On-Resistance
IRLL014NTRPBF IGBT Applications
Light Dimmer
Automobile Uses
UPS
Pre-heating For Electronic Lamp Ballast
Inrush Current Limitation
AC/DC Motor Drivers
SMPS
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