IRLL024ZPBF

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Mfr.Part #
IRLL024ZPBF
Manufacturer
International Rectifier
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 55V 5A SOT223
Stock
28,327
In Stock :
28,327

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Lead Free :
Contains Lead
Vgs (Max) :
±16V
REACH SVHC :
No SVHC
Turn-Off Delay Time :
20 ns
Published :
1999
Package / Case :
TO-261-4, TO-261AA
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 5V
Element Configuration :
Single
Width :
3.7mm
Series :
HEXFET®
Number of Pins :
3
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Rds On (Max) @ Id, Vgs :
60m Ω @ 3A, 10V
Height :
1.4478mm
Power Dissipation :
2.8W
Dual Supply Voltage :
55V
Drain to Source Breakdown Voltage :
55V
Gate to Source Voltage (Vgs) :
16V
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
15 ns
RoHS Status :
ROHS3 Compliant
Length :
6.6802mm
Rise Time :
33ns
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Radiation Hardening :
No
Threshold Voltage :
3V
Voltage - Rated DC :
55V
Turn On Delay Time :
8.6 ns
Current Rating :
5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Resistance :
60mOhm
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
380pF @ 25V
Vgs(th) (Max) @ Id :
3V @ 250µA
Power Dissipation-Max :
1W Ta
Factory Lead Time :
10 Weeks
Continuous Drain Current (ID) :
5A
Mounting Type :
Surface Mount
Nominal Vgs :
3 V
Datasheets
IRLL024ZPBF
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRLL024ZPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, IRLL024ZPBF pinout, IRLL024ZPBF datasheet PDF, IRLL024ZPBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRLL024ZPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRLL024ZPBF


N-Channel Tube 60m Ω @ 3A, 10V ±16V 380pF @ 25V 11nC @ 5V TO-261-4, TO-261AA

IRLL024ZPBF Description


The IRLL024ZPBF is a HEXFET? single N-channel Power MOSFET utilizing the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this IRLL024ZPBF an extremely efficient and reliable device for use in a wide variety of applications



IRLL024ZPBF Features


  • Advanced Process Technology

  • Ultra-Low On-Resistance

  • 150°C Operating Temperature

  • Fast Switching

  • Repetitive Avalanche Allowed up to Tjmax

  • Lead-Free



IRLL024ZPBF Applications


  • Induction furnaces

  • Arc furnaces and arc welders

  • Steel rolling mills

  • Large motors with periodic loading

  • Thyristor drives


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