IRLL014NTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs (Max) :

±16V

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

140m Ω @ 2A, 10V

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Additional Feature :

High Reliability

Power Dissipation-Max :

1W Ta

JESD-30 Code :

R-PDSO-G4

Package / Case :

TO-261-4, TO-261AA

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Pulsed Drain Current-Max (IDM) :

16A

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

55V

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Number of Terminations :

4

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.14Ohm

Terminal Position :

Dual

Number of Elements :

1

Avalanche Energy Rating (Eas) :

32 mJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Published :

1999

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

2A

Drain to Source Voltage (Vdss) :

55V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE