IRLL024ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

55V

Rise Time :

33ns

Power Dissipation-Max :

1W Ta

Voltage - Rated DC :

55V

ECCN Code :

EAR99

Nominal Vgs :

3 V

Radiation Hardening :

No

Resistance :

60mOhm

Turn On Delay Time :

8.6 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Current Rating :

5A

Gate to Source Voltage (Vgs) :

16V

Factory Lead Time :

10 Weeks

Power Dissipation :

2.8W

Height :

1.4478mm

Number of Elements :

1

Turn-Off Delay Time :

20 ns

Lead Free :

Contains Lead

RoHS Status :

ROHS3 Compliant

Length :

6.6802mm

Package / Case :

TO-261-4, TO-261AA

Published :

1999

Fall Time (Typ) :

15 ns

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Series :

HEXFET®

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

60m Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Vgs (Max) :

±16V

Continuous Drain Current (ID) :

5A

Element Configuration :

Single

Width :

3.7mm

Number of Pins :

3

Threshold Voltage :

3V

Mount :

Surface Mount

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

55V