IRLL024Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Power Dissipation-Max :

1W Ta

ECCN Code :

EAR99

Additional Feature :

High Reliability

Qualification Status :

Not Qualified

Published :

2004

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

245

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

5A

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Case Connection :

DRAIN

JESD-30 Code :

R-PDSO-G4

FET Type :

N-Channel

JESD-609 Code :

e0

Series :

HEXFET®

DS Breakdown Voltage-Min :

55V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.1Ohm

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

4

Terminal Finish :

TIN LEAD

Package / Case :

TO-261-4, TO-261AA

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±16V

Drain to Source Voltage (Vdss) :

55V

Packaging :

Tube

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

60m Ω @ 3A, 10V

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Time@Peak Reflow Temperature-Max (s) :

30