IRLL014TRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G3

Rise Time :

110ns

Number of Elements :

1

Fall Time (Typ) :

26 ns

REACH SVHC :

Unknown

Additional Feature :

LOGIC LEVEL COMPATIBLE

Factory Lead Time :

8 Weeks

Vgs (Max) :

±10V

Published :

2011

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

2W

Pin Count :

4

Length :

6.7mm

Lead Free :

Lead Free

Voltage :

55V

Continuous Drain Current (ID) :

2.7A

Threshold Voltage :

2V

Number of Channels :

1

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

10V

Mount :

Surface Mount

Nominal Vgs :

1 V

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA

Turn On Delay Time :

9.3 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Terminations :

3

Current :

2A

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Packaging :

Tape and Reel (TR)

Number of Pins :

4

Height :

1.8mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Power Dissipation-Max :

2W Ta 3.1W Tc

Resistance :

200mOhm

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

17 ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.6A, 5V

Width :

3.7mm

Weight :

250.212891mg

Terminal Form :

Gull wing

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

RoHS Status :

ROHS3 Compliant