IRLBA3803P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

720A

FET Type :

N-Channel

Number of Terminations :

3

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Power Dissipation-Max :

270W Tc

Drain-source On Resistance-Max :

0.005ohm

Avalanche Energy Rating (Eas) :

610 mJ

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

179A Tc

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30V

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

5m Ω @ 71A, 10V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

Mounting Type :

Through Hole

Series :

HEXFET®

Published :

2002

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Package / Case :

TO-273AA

Peak Reflow Temperature (Cel) :

250

Drain Current-Max (Abs) (ID) :

179A

Surface Mount :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tube

Terminal Finish :

MATTE TIN OVER NICKEL

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

R-PSIP-T3

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE