IRLBA1304

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

95A

JESD-30 Code :

R-PSIP-T3

Drain-source On Resistance-Max :

0.004ohm

Qualification Status :

Not Qualified

Power Dissipation-Max :

300W Tc

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Number of Elements :

1

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±16V

Package / Case :

TO-273AA

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

185A Tc

DS Breakdown Voltage-Min :

40V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

1160 mJ

Rds On (Max) @ Id, Vgs :

4m Ω @ 110A, 10V

Surface Mount :

No

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

40V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Mounting Type :

Through Hole

Published :

1999

Pulsed Drain Current-Max (IDM) :

740A

Input Capacitance (Ciss) (Max) @ Vds :

7660pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

250

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Terminal Position :

Single

Terminal Finish :

MATTE TIN OVER NICKEL