IRLB3036GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

220ns

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Radiation Hardening :

No

Package / Case :

TO-220-3

Rds On Max :

2.4 mΩ

Min Operating Temperature :

-55°C

Mount :

Through Hole

Published :

2009

Max Operating Temperature :

175°C

Fall Time (Typ) :

110 ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

110 ns

Power Dissipation :

380W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

2.8MOhm

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Mounting Type :

Through Hole

Turn On Delay Time :

66 ns

Width :

4.69mm

Input Capacitance (Ciss) (Max) @ Vds :

11210pF @ 50V

Length :

10.5156mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance :

11.21nF

Series :

HEXFET®

Continuous Drain Current (ID) :

195A

Drain to Source Breakdown Voltage :

60V

Gate to Source Voltage (Vgs) :

16V

Element Configuration :

Single

Supplier Device Package :

TO-220AB

Vgs (Max) :

±16V

FET Type :

N-Channel

Height :

15.24mm

Rds On (Max) @ Id, Vgs :

2.4mOhm @ 165A, 10V

Power Dissipation-Max :

380W Tc

RoHS Status :

RoHS Compliant

Packaging :

Tube

Drain to Source Voltage (Vdss) :

60V