IRLB3034PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Turn-Off Delay Time :

97 ns

Drain to Source Breakdown Voltage :

40V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Rise Time :

827ns

Input Capacitance (Ciss) (Max) @ Vds :

10315pF @ 25V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

195A

Power Dissipation-Max :

375W Tc

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Power Dissipation :

375W

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 195A, 10V

Threshold Voltage :

2.5V

Gate Charge (Qg) (Max) @ Vgs :

162nC @ 4.5V

Resistance :

1.7MOhm

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

255 mJ

Number of Channels :

1

Turn On Delay Time :

65 ns

Length :

10.5156mm

Published :

2009

Packaging :

Tube

Height :

19.8mm

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Fall Time (Typ) :

355 ns

Max Junction Temperature (Tj) :

175°C

Mount :

Through Hole

FET Type :

N-Channel

Number of Pins :

3

Width :

4.699mm

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks