IRLB4030PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

180A

Gate to Source Voltage (Vgs) :

16V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Radiation Hardening :

No

Nominal Vgs :

2.5 V

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

11360pF @ 50V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Packaging :

Tube

Turn On Delay Time :

74 ns

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 110A, 10V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Resistance :

4.3mOhm

Height :

15.24mm

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

370W

Vgs (Max) :

±16V

Width :

4.69mm

Threshold Voltage :

2.5V

Fall Time (Typ) :

170 ns

Lead Free :

Lead Free

Number of Pins :

3

Length :

10.5156mm

Mount :

Through Hole

Dual Supply Voltage :

100V

Mounting Type :

Through Hole

Rise Time :

330ns

Turn-Off Delay Time :

110 ns

Drain to Source Breakdown Voltage :

100V

Termination :

Through Hole

Power Dissipation-Max :

370W Tc