IRLBA1304P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

AVALANCHE RATED

Published :

1999

Drain Current-Max (Abs) (ID) :

95A

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

40V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-273AA

Current - Continuous Drain (Id) @ 25°C :

185A Tc

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

40V

Power Dissipation-Max :

300W Tc

Number of Elements :

1

JESD-609 Code :

e3

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

7660pF @ 25V

FET Type :

N-Channel

Terminal Position :

Single

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

1160 mJ

Vgs (Max) :

±16V

Number of Terminations :

3

Terminal Finish :

MATTE TIN OVER NICKEL

Case Connection :

DRAIN

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

1V @ 250μA

Peak Reflow Temperature (Cel) :

250

Drain-source On Resistance-Max :

0.004ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Packaging :

Tube

ECCN Code :

EAR99

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

4m Ω @ 110A, 10V

Pulsed Drain Current-Max (IDM) :

740A