IRLB8721PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

1.8 V

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Number of Elements :

1

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

250A

Avalanche Energy Rating (Eas) :

98 mJ

Turn-Off Delay Time :

9 ns

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Contact Plating :

Tin

Mounting Type :

Through Hole

Termination :

Through Hole

ECCN Code :

EAR99

Power Dissipation :

65W

Threshold Voltage :

1.8V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1077pF @ 15V

REACH SVHC :

No SVHC

Packaging :

Tube

Length :

10.668mm

Continuous Drain Current (ID) :

62A

Dual Supply Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 31A, 10V

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

17 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

65W Tc

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Lead Free :

Lead Free

Series :

HEXFET®

Vgs (Max) :

±20V

Rise Time :

93ns

Radiation Hardening :

No

Width :

4.826mm

Height :

9.02mm

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Transistor Element Material :

SILICON

Recovery Time :

24 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

8.7mOhm

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Turn On Delay Time :

9.1 ns

Published :

2005

FET Type :

N-Channel