IRLB8748PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

2139pF @ 15V

FET Type :

N-Channel

Nominal Vgs :

1.8 V

Qualification Status :

Not Qualified

Turn-Off Delay Time :

16 ns

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Turn On Delay Time :

14 ns

Mounting Type :

Through Hole

Power Dissipation-Max :

75W Tc

ECCN Code :

EAR99

Number of Elements :

1

Recovery Time :

35 ns

Termination :

Through Hole

Dual Supply Voltage :

30V

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

78A

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

78A Tc

Lead Free :

Lead Free

Case Connection :

DRAIN

Continuous Drain Current (ID) :

92A

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Power Dissipation :

75W

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

34 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

10.668mm

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Height :

16.51mm

Resistance :

4.8mOhm

Rise Time :

96ns

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 40A, 10V

Factory Lead Time :

12 Weeks

Width :

4.826mm

Operating Temperature :

-55°C~175°C TJ