IRL6372TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

30V

Pulsed Drain Current-Max (IDM) :

65A

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

8.1A

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

17.9m Ω @ 8.1A, 4.5V

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

34 ns

Number of Terminations :

8

Published :

2011

Number of Pins :

8

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Radiation Hardening :

No

Turn On Delay Time :

5.9 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Max Power Dissipation :

2W

Fall Time (Typ) :

15 ns

Base Part Number :

IRL6372PBF

Factory Lead Time :

15 Weeks

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Series :

HEXFET®

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Rise Time :

13ns

REACH SVHC :

No SVHC

Resistance :

17.9mOhm

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

12V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Nominal Vgs :

1.1 V

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Surface Mount

ECCN Code :

EAR99

Power Dissipation :

2W