IRL620
- Mfr.Part #
- IRL620
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 5.2A TO220AB
- Stock
- 8,149
- In Stock :
- 8,149
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2016
- Drain to Source Breakdown Voltage :
- 200V
- Continuous Drain Current (ID) :
- 5.2A
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Packaging :
- Tube
- Weight :
- 6.000006g
- Mount :
- Through Hole
- Vgs (Max) :
- ±10V
- Supplier Device Package :
- TO-220AB
- Drain to Source Voltage (Vdss) :
- 200V
- Power Dissipation-Max :
- 50W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Height :
- 9.01mm
- Number of Pins :
- 3
- Width :
- 4.7mm
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Resistance :
- 800mOhm
- Rds On Max :
- 800 mΩ
- Rds On (Max) @ Id, Vgs :
- 800mOhm @ 3.1A, 5V
- Fall Time (Typ) :
- 17 ns
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 18 ns
- Turn On Delay Time :
- 4.2 ns
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 10.41mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Rise Time :
- 31ns
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 10V
- Package / Case :
- TO-220-3
- Current - Continuous Drain (Id) @ 25°C :
- 5.2A Tc
- Number of Channels :
- 1
- Input Capacitance :
- 360pF
- Datasheets
- IRL620
N-Channel Tube 800mOhm @ 3.1A, 5V ±10V 360pF @ 25V 16nC @ 5V 200V TO-220-3
IRL620 Overview
The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5.2A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 18 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 800mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 4.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (4V 5V), this device helps reduce its power consumption.
IRL620 Features
a continuous drain current (ID) of 5.2A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 800mOhm
a 200V drain to source voltage (Vdss)
IRL620 Applications
There are a lot of Vishay Siliconix
IRL620 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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