IRL60B216

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

195A

DS Breakdown Voltage-Min :

60V

JEDEC-95 Code :

TO-220AB

Threshold Voltage :

2.4V

Number of Elements :

1

Mounting Type :

Through Hole

Lead Free :

Lead Free

Series :

HEXFET®, StrongIRFET™

Height :

16.51mm

RoHS Status :

ROHS3 Compliant

Length :

10.67mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

15570pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

REACH SVHC :

Unknown

Turn On Delay Time :

70 ns

Gate Charge (Qg) (Max) @ Vgs :

258nC @ 4.5V

Turn-Off Delay Time :

190 ns

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0019Ohm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 100A, 10V

Published :

2013

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Number of Terminations :

3

Width :

4.83mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

375W Tc

Number of Pins :

3

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

1045 mJ

Pulsed Drain Current-Max (IDM) :

780A

Transistor Application :

SWITCHING

Packaging :

Tube