IRL620PBF
- Mfr.Part #
- IRL620PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 5.2A TO220AB
- Stock
- 16,603
- In Stock :
- 16,603
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 800 mΩ
- Current Rating :
- 5.2A
- Mount :
- Through Hole
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 200V
- Continuous Drain Current (ID) :
- 5.2A
- Vgs (Max) :
- ±10V
- Mounting Type :
- Through Hole
- Resistance :
- 800mOhm
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Height :
- 9.01mm
- Supplier Device Package :
- TO-220AB
- Factory Lead Time :
- 8 Weeks
- Min Operating Temperature :
- -55°C
- Width :
- 4.7mm
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 31ns
- Power Dissipation-Max :
- 50W Tc
- REACH SVHC :
- Unknown
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Drain to Source Resistance :
- 800mOhm
- Fall Time (Typ) :
- 17 ns
- Power Dissipation :
- 50W
- Lead Free :
- Lead Free
- Input Capacitance :
- 360pF
- Voltage - Rated DC :
- 200V
- Rds On (Max) @ Id, Vgs :
- 800mOhm @ 3.1A, 5V
- Length :
- 10.41mm
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 18 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 5V
- Threshold Voltage :
- 2V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 200V
- Weight :
- 6.000006g
- Turn On Delay Time :
- 4.2 ns
- Published :
- 2008
- Package / Case :
- TO-220-3
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 10V
- Nominal Vgs :
- 2 V
- Current - Continuous Drain (Id) @ 25°C :
- 5.2A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Datasheets
- IRL620PBF
N-Channel Tube 800mOhm @ 3.1A, 5V ±10V 360pF @ 25V 16nC @ 5V 200V TO-220-3
IRL620PBF Overview
A device's maximal input capacitance is 360pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 18 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 800mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2V threshold voltage.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).
IRL620PBF Features
a continuous drain current (ID) of 5.2A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 800mOhm
a threshold voltage of 2V
a 200V drain to source voltage (Vdss)
IRL620PBF Applications
There are a lot of Vishay Siliconix
IRL620PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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