IRL60HS118
- Mfr.Part #
- IRL60HS118
- Manufacturer
- International Rectifier
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- IRL60HS118 - 12V-300V N-CHANNEL
- Stock
- 863
- In Stock :
- 863
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.3V @ 10μA
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 60V
- Turn-Off Delay Time :
- 9 ns
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 4.5V
- Height :
- 1mm
- Package / Case :
- 6-VDFN Exposed Pad
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 25V
- Power Dissipation-Max :
- 11.5W Tc
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 1.7V
- Pulsed Drain Current-Max (IDM) :
- 56A
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 11A, 10V
- Continuous Drain Current (ID) :
- 18.5A
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 6
- Turn On Delay Time :
- 8.4 ns
- Max Junction Temperature (Tj) :
- 175°C
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2.5W
- Published :
- 2013
- Avalanche Energy Rating (Eas) :
- 22 mJ
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 18.5A Tc
- JESD-30 Code :
- S-PDSO-N6
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Factory Lead Time :
- 18 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- NO LEAD
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer Package Identifier :
- PG-TSDSON-6
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Datasheets
- IRL60HS118
N-Channel Tape & Reel (TR) 17m Ω @ 11A, 10V ±20V 660pF @ 25V 8nC @ 4.5V 6-VDFN Exposed Pad
IRL60HS118 Description
IRL60HS118 is a new type of logic level power MOSFET manufactured by Infineon Technologies based on the OptiMOS?5 chip. It is able to provide higher power density, higher switching frequency, and improved efficiency, making it well suited for a wide range of applications including wireless charging, telecom, adapter, etc. Power MOSFET IRL60HS118 is available in the space-saving PQFN 2x2 package.
IRL60HS118 Features
-
Higher power density
-
Higher switching frequency
-
Improved efficiency
-
Higher power density designs
-
Available in the PQFN 2mm x 2mm package
IRL60HS118 Applications
-
Adapter
-
Telecom
-
Wireless charging
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