IRL620SPBF
- Mfr.Part #
- IRL620SPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 5.2A D2PAK
- Stock
- 14,038
- In Stock :
- 14,038
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 4.83mm
- Input Capacitance :
- 360pF
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Radiation Hardening :
- No
- Number of Channels :
- 1
- Turn On Delay Time :
- 4.2 ns
- Current - Continuous Drain (Id) @ 25°C :
- 5.2A Tc
- Max Operating Temperature :
- 150°C
- Gate to Source Voltage (Vgs) :
- 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Width :
- 9.65mm
- Power Dissipation :
- 3.1W
- Fall Time (Typ) :
- 17 ns
- Published :
- 2014
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 18 ns
- Rds On Max :
- 800 mΩ
- Element Configuration :
- Single
- REACH SVHC :
- Unknown
- Factory Lead Time :
- 8 Weeks
- Length :
- 10.67mm
- Power Dissipation-Max :
- 3.1W Ta 50W Tc
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Resistance :
- 800mOhm
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package :
- D2PAK
- Continuous Drain Current (ID) :
- 5.2A
- Packaging :
- Tube
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 200V
- Threshold Voltage :
- 2V
- Rds On (Max) @ Id, Vgs :
- 800mOhm @ 3.1A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 1.437803g
- Rise Time :
- 31ns
- FET Type :
- N-Channel
- Vgs (Max) :
- ±10V
- RoHS Status :
- ROHS3 Compliant
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 5V
- Datasheets
- IRL620SPBF
N-Channel Tube 800mOhm @ 3.1A, 10V ±10V 360pF @ 25V 16nC @ 5V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL620SPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 360pF @ 25V.This device conducts a continuous drain current (ID) of 5.2A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 18 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 800mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.2 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
IRL620SPBF Features
a continuous drain current (ID) of 5.2A
the turn-off delay time is 18 ns
single MOSFETs transistor is 800mOhm
a threshold voltage of 2V
a 200V drain to source voltage (Vdss)
IRL620SPBF Applications
There are a lot of Vishay Siliconix
IRL620SPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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