IRL60HS118

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Published :

2013

Max Junction Temperature (Tj) :

175°C

Threshold Voltage :

1.7V

JESD-30 Code :

S-PDSO-N6

Avalanche Energy Rating (Eas) :

22 mJ

Transistor Application :

SWITCHING

Manufacturer Package Identifier :

PG-TSDSON-6

ECCN Code :

EAR99

Terminal Form :

NO LEAD

Rds On (Max) @ Id, Vgs :

17m Ω @ 11A, 10V

Pulsed Drain Current-Max (IDM) :

56A

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Pbfree Code :

yes

Power Dissipation-Max :

11.5W Tc

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Drain to Source Breakdown Voltage :

60V

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.3V @ 10μA

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Height :

1mm

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

18.5A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

18.5A

Turn On Delay Time :

8.4 ns

Number of Elements :

1

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-VDFN Exposed Pad

Factory Lead Time :

18 Weeks

Terminal Position :

Dual

Turn-Off Delay Time :

9 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V