IRL1404ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.6426mm

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 5V

Turn On Delay Time :

19 ns

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

40V

Transistor Element Material :

SILICON

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

30 ns

Power Dissipation-Max :

230W Tc

Height :

8.77mm

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 75A, 10V

FET Type :

N-Channel

Lead Free :

Lead Free

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

5080pF @ 25V

Resistance :

3.1mOhm

Fall Time (Typ) :

49 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Power Dissipation :

230W

Current Rating :

75A

Avalanche Energy Rating (Eas) :

220 mJ

Published :

2004

Pulsed Drain Current-Max (IDM) :

790A

Recovery Time :

39 ns

Nominal Vgs :

2.7 V

Transistor Application :

SWITCHING

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Package / Case :

TO-220-3

Radiation Hardening :

No

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Rise Time :

180ns

Continuous Drain Current (ID) :

75A

Drain Current-Max (Abs) (ID) :

200A

Number of Pins :

3

Voltage - Rated DC :

40V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

16V

Drain to Source Breakdown Voltage :

40V

Threshold Voltage :

2.7V

Width :

4.82mm

Vgs (Max) :

±16V