IRL1004LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

10.54mm

Current Rating :

130A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Mount :

Through Hole

Supplier Device Package :

TO-262

Rds On Max :

6.5 mΩ

Rise Time :

210ns

Input Capacitance (Ciss) (Max) @ Vds :

5330pF @ 25V

Published :

2004

Drain to Source Breakdown Voltage :

40V

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 78A, 10V

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

16V

Power Dissipation-Max :

3.8W Ta 200W Tc

Number of Pins :

3

Turn-Off Delay Time :

25 ns

Voltage - Rated DC :

40V

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Drain to Source Resistance :

9mOhm

Max Operating Temperature :

175°C

Continuous Drain Current (ID) :

130A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Vgs (Max) :

±16V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Power Dissipation :

150W

Turn On Delay Time :

16 ns

Input Capacitance :

5.33nF

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Min Operating Temperature :

-55°C