IRL1004STRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Published :

1999

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±16V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.8W Ta 200W Tc

DS Breakdown Voltage-Min :

40V

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Terminal Position :

Single

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0065ohm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

700 mJ

Drain to Source Voltage (Vdss) :

40V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Surface Mount :

yes

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

130A

Pulsed Drain Current-Max (IDM) :

520A

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

5330pF @ 25V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 78A, 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

1