IRL1004

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 78A, 10V

Drain to Source Voltage (Vdss) :

40V

Vgs (Max) :

±16V

Drain-source On Resistance-Max :

0.0065ohm

Published :

1999

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Pulsed Drain Current-Max (IDM) :

520A

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

700 mJ

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

40V

Current - Continuous Drain (Id) @ 25°C :

130A Tc

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

RoHS Status :

Non-RoHS Compliant

Surface Mount :

No

FET Type :

N-Channel

Power Dissipation-Max :

200W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

5330pF @ 25V

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain Current-Max (Abs) (ID) :

130A

Case Connection :

DRAIN

Number of Elements :

1

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED