IRL1004SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Fall Time (Typ) :

14 ns

Continuous Drain Current (ID) :

130A

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Mount :

Surface Mount

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

16V

Avalanche Energy Rating (Eas) :

700 mJ

Packaging :

Tube

Voltage - Rated DC :

40V

Turn-Off Delay Time :

25 ns

Number of Elements :

1

Vgs (Max) :

±16V

Power Dissipation-Max :

3.8W Ta 200W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Vgs(th) (Max) @ Id :

1V @ 250μA

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Current Rating :

130A

Transistor Element Material :

SILICON

Rise Time :

210ns

Number of Terminations :

2

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Width :

9.65mm

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 78A, 10V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Length :

10.67mm

Termination :

SMD/SMT

Lead Free :

Lead Free

Resistance :

6.5mOhm

Drain to Source Breakdown Voltage :

40V

Threshold Voltage :

1V

ECCN Code :

EAR99

Power Dissipation :

3.1W

Series :

HEXFET®

Dual Supply Voltage :

40V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

1 V

Number of Pins :

3

Recovery Time :

120 ns

Height :

4.83mm

Input Capacitance (Ciss) (Max) @ Vds :

5330pF @ 25V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

16 ns

Pulsed Drain Current-Max (IDM) :

520A