IRL1004STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.8W Ta 200W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Mounting Type :

Surface Mount

Power Dissipation :

150W

Drain to Source Breakdown Voltage :

40V

Avalanche Energy Rating (Eas) :

700 mJ

Turn-Off Delay Time :

25 ns

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

16 ns

Pulsed Drain Current-Max (IDM) :

520A

Fall Time (Typ) :

14 ns

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 250μA

Current Rating :

110A

Height :

4.826mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.0065ohm

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 78A, 10V

FET Type :

N-Channel

Vgs (Max) :

±16V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Input Capacitance (Ciss) (Max) @ Vds :

5330pF @ 25V

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Length :

10.668mm

Element Configuration :

Single

Factory Lead Time :

14 Weeks

Radiation Hardening :

No

ECCN Code :

EAR99

Published :

2004

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Rise Time :

210ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

JESD-609 Code :

e3

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

HEXFET®

Width :

9.65mm

Number of Pins :

3

Continuous Drain Current (ID) :

130A