IRL1404STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Power Dissipation-Max :

3.8W Ta 200W Tc

Pulsed Drain Current-Max (IDM) :

640A

Mounting Type :

Surface Mount

Fall Time (Typ) :

130 ns

Terminal Form :

Gull wing

Radiation Hardening :

No

Length :

10.668mm

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Published :

2002

Nominal Vgs :

3 V

Continuous Drain Current (ID) :

160A

Lead Free :

Contains Lead, Lead Free

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation :

3.8W

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

Number of Elements :

1

Height :

4.703mm

Mount :

Surface Mount, Through Hole

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

38 ns

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Vgs(th) (Max) @ Id :

3V @ 250µA

Current Rating :

160A

Number of Pins :

3

Transistor Application :

SWITCHING

Width :

4.826mm

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

520 mJ

Threshold Voltage :

3V

Drain to Source Breakdown Voltage :

40V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

40V

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Resistance :

4mOhm

Rise Time :

270ns

Drive Voltage (Max Rds On,Min Rds On) :

4.3V 10V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

160A Tc

FET Type :

N-Channel

Transistor Element Material :

SILICON

Turn On Delay Time :

18 ns

ECCN Code :

EAR99

Dual Supply Voltage :

40V

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)