IRL1404SPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

640A

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Power Dissipation-Max :

3.8W Ta 200W Tc

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

160A

Terminal Position :

Single

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Published :

2004

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Drain to Source Voltage (Vdss) :

40V

Packaging :

Tube

ECCN Code :

EAR99

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

40V

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.004ohm

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.3V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

520 mJ