IRL1404PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Recovery Time :

94 ns

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

Fall Time (Typ) :

37 ns

Packaging :

Tube

Package / Case :

TO-220-3

Power Dissipation :

200W

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Vgs(th) (Max) @ Id :

3V @ 250µA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Published :

2004

Operating Mode :

ENHANCEMENT MODE

Width :

4.69mm

Turn On Delay Time :

18 ns

Lead Free :

Lead Free

Continuous Drain Current (ID) :

160A

Voltage - Rated DC :

40V

Pulsed Drain Current-Max (IDM) :

640A

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

40V

Element Configuration :

Single

Radiation Hardening :

No

FET Type :

N-Channel

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Gate to Source Voltage (Vgs) :

20V

Resistance :

4mOhm

Input Capacitance (Ciss) (Max) @ Vds :

6590pF @ 25V

Number of Terminations :

3

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Threshold Voltage :

3V

Number of Pins :

3

Turn-Off Delay Time :

38 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Height :

15.24mm

Drive Voltage (Max Rds On,Min Rds On) :

4.3V 10V

Factory Lead Time :

14 Weeks

Length :

10.5156mm

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

620 mJ

Current Rating :

160A

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Power Dissipation-Max :

200W Tc

Rise Time :

270ns

RoHS Status :

ROHS3 Compliant