IRL1404L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

640A

Number of Elements :

1

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

160A Tc

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Mounting Type :

Through Hole

Power Dissipation-Max :

3.8W Ta 200W Tc

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Terminal Position :

Single

JESD-30 Code :

R-PSIP-T3

Drive Voltage (Max Rds On,Min Rds On) :

4.3V 10V

Drain Current-Max (Abs) (ID) :

160A

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.004ohm

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

DS Breakdown Voltage-Min :

40V

Vgs(th) (Max) @ Id :

3V @ 250µA

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN OVER NICKEL

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

520 mJ

Published :

2002

Vgs (Max) :

±20V

Series :

HEXFET®