IRL1104STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

40V

Input Capacitance :

3.445nF

Supplier Device Package :

D2PAK

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

40V

Published :

2004

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Turn On Delay Time :

18 ns

Power Dissipation-Max :

2.4W Ta 167W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

167W

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Rise Time :

257ns

Current - Continuous Drain (Id) @ 25°C :

104A Tc

Rds On (Max) @ Id, Vgs :

8mOhm @ 62A, 10V

Number of Pins :

3

Drain to Source Resistance :

8mOhm

Max Operating Temperature :

175°C

Fall Time (Typ) :

64 ns

Radiation Hardening :

No

FET Type :

N-Channel

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

32 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

3445pF @ 25V

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On Max :

8 mΩ

Continuous Drain Current (ID) :

104A

Number of Elements :

1

Vgs (Max) :

±16V